Product Summary

The STK10C68-5C45M is a fast 8K x 8 nvSRAM with a nonvolatile element incorporated in each static memory cell. The STK10C68-5C45M can be read and written an unlimited number of times, while independent nonvolatile data resides in nonvolatile elements. Data may easily be transferred from the SRAM to the nonvolatile elements, or from the nonvolatile emements to the SRAM, using the NE pin. Transfers from the nonvolatile elements to the SRAM also take place automatically on restoration of power. The STK10C68-5C45M combines the high performance and ease of use of a fast SRAM with nonvolatile data integrity. It features industry-standard pinput for nonvolatile RAMs.

Parametrics

STK10C68-5C45M absolute maximum ratings: (1)Voltage on Input Relative to Ground: –0.5V to 7.0V; (2)Voltage on Input Relative to VSS: –0.6V to (VCC + 0.5V) ; (3)Voltage on DQ0-7: –0.5V to (VCC + 0.5V); (4)Temperature under Bias: –55 to 125℃; (5)Storage Temperature: –65 to 150℃; (6)Power Dissipation: 1W; (7)DC Output Current (1 output at a time, 1s duration): 15mA.

Features

STK10C68-5C45M features: (1)25ns, 35ns and 55ns access times; (2)STORE to nonvolatile elements initiated by hardware; (3)RECALL to SRAM initiated by hardware or power restore; (4)automatic STORE timing; (5)10mA typical Icc at 200ns cycle time; (6)unlimited READ, WRITE and RECALL cycles; (7)1000000 STORE cycles to nonvolatile elements; (8)100 year data rectention; (9)commercial, industrial and military temperatures; (10)28-pin DIP, SOIC and LCC package.

Diagrams

STK10C68-5C45M block diagram

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