(China (Mainland))
Product Summary
The FQA24N50 is an N-Channel enhancement mode power field effect transistor. It is produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy pulse in the avalanche and commutation mode. The FQA24N50 is well suited for high efficiency switch mode power supplies, where the body diode is used such as phase-shift ZVS, basic full-bridge topology.
Parametrics
FQA24N50 absolute maximum ratings: (1)Drain-Source Voltage, VDSS: 500V; (2)Drain Current - Continuous (TC = 25℃), ID: 24 A; (3)Drain Current - Continuous (TC = 100℃), ID: 15.2A; (4)Drain Current - Pulsed, IDM: 96A; (5)Gate-Source Voltage, VGSS: ±30V; (6)Single Pulsed Avalanche Energy, EAS: 1100mJ; (7)Avalanche Current, IAR: 24A; (8)Repetitive Avalanche Energy, EAR: 29mJ; (9)Peak Diode Recovery dv/dt, dv/dt: 15V/ns; (10)Power Dissipation (TC = 25℃), PD: 290W; (11)Power Dissipation, Derate above 25℃: 2.33W/℃; (12)Operating and Storage Temperature Range, TJ, TSTG: -55 to +150℃; (13)Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds, TL: 300℃.
Features
FQA24N50 features: (1)24A, 500V, RDS(on) = 0.2Ω at VGS=10V; (2)Low gate charge ( typical 90 nC); (3)Low Crss ( typical 55 pF); (4)Fast switching; (5)100% avalanche tested; (6)improved dv/dt capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 FQA24N50 |
Fairchild Semiconductor |
MOSFET 500V N-Channel QFET |
Data Sheet |
Negotiable |
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FQA24N50_F109 |
Fairchild Semiconductor |
MOSFET QFET 500V 24A |
Data Sheet |
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FQA24N50F_F109 |
Fairchild Semiconductor |
MOSFET QFET 500V 24A |
Data Sheet |
Negotiable |
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FQA24N50F |
Fairchild Semiconductor |
MOSFET 500V N-Channel FRFET |
Data Sheet |
Negotiable |
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